IXFH60N20

Obsolete

IXYS

MOSFET N-CH 200V 60A TO247AD

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Obsolete

IXYS

MOSFET N-CH 200V 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH60N20

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id
IXYS IXFH60N20	TO-247AD (IXFH)	300 W	33 mOhm	60 A	5200 pF	-55 °C	150 °C	TO-247-3	155 nC	20 V	4 V	Through Hole	200 V	N-Channel	10 V	MOSFET (Metal Oxide)
IXYS IXFH60N60X	TO-247 (IXTH)		55 mOhm	60 A	5800 pF	-55 °C	150 °C	TO-247-3	143 nC	30 V		Through Hole	600 V	N-Channel	10 V	MOSFET (Metal Oxide)	890 W	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 60A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available