SUD42N03-3M9P-GE3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 42A TO252

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 42A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SUD42N03-3M9P-GE3

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	3535 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.5 W, 73.5 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SUD42N03-3M9P-GE3	20 V	MOSFET (Metal Oxide)	42 A	TO-252AA	100 nC	2.5 V	3535 pF	Surface Mount	4.5 V 10 V	N-Channel	30 V	2.5 W 73.5 W	3.9 mOhm	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 42A (Tc) 2.5W (Ta), 73.5W (Tc) Surface Mount TO-252AA

Technical documentation and resources