IPD80N04S306ATMA1

NRND

Infineon Technologies

IPD80N04S3-06 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 5.2 MΩ MAX, DPAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

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NRND

Infineon Technologies

IPD80N04S3-06 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 5.2 MΩ MAX, DPAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD80N04S306ATMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Mounting Type	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPD80N04S306ATMA1	-55 °C	175 ░C	3250 pF	100 W	40 V	4 V	PG-TO252-3-11	5.2 mOhm	90 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	N-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.73
	Digi-Reel®	1	$ 2.73
	Tape & Reel (TR)	2500	$ 0.80

General part information

N-Channel 40 V 90A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources