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BSZ0589NSATMA1 - 8 PowerTDFN

BSZ0589NSATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.4 MOHM;

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DocumentsDatasheet
BSZ0589NSATMA1 - 8 PowerTDFN

BSZ0589NSATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ0589NSATMA1
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.1 W
Rds On (Max) @ Id, Vgs4.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.15
10$ 0.69
100$ 0.52
500$ 0.42
1000$ 0.36
2000$ 0.35
Digi-Reel® 1$ 1.15
10$ 0.69
100$ 0.52
500$ 0.42
1000$ 0.36
2000$ 0.35
Tape & Reel (TR) 5000$ 0.31
10000$ 0.29
NewarkEach (Supplied on Cut Tape) 1$ 1.18
10$ 0.76
25$ 0.68
50$ 0.61
100$ 0.54
250$ 0.48
500$ 0.42
1000$ 0.35

Description

General part information

BSZ0589 Series

With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.

Documents

Technical documentation and resources