BCR583E6327HTSA1
Infineon Technologies
TRANS PREBIAS PNP 50V SOT23
Deep-Dive with AI
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BCR583E6327HTSA1
Infineon Technologies
TRANS PREBIAS PNP 50V SOT23
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BCR583E6327HTSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 330 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | PG-SOT23 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.38 | |
| Digi-Reel® | 1 | $ 0.38 | ||
| Tape & Reel (TR) | 18000 | $ 0.07 | ||
| 30000 | $ 0.07 | |||
| 75000 | $ 0.06 | |||
| 150000 | $ 0.06 | |||
Description
General part information
BCR583 Series
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23
Documents
Technical documentation and resources
No documents available