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100-TQFP

71V3576S150PFGI8

Obsolete
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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100-TQFP

71V3576S150PFGI8

Obsolete
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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Description

General part information

71V3576 Series

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Technical Specifications

Parameters and characteristics for this part

Specification71V3576S150PFGI8
Access Time3.8 ns
Clock Frequency150 MHz
Memory Depth128 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size4.5 Mbit
Memory TypeVolatile
Memory Width36 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case100-LQFP
Package Length14 mm
Package Name100-TQFP
Package Width14 mm
TechnologySRAM - Synchronous, SDR
Voltage - Supply (Maximum)3.465 V
Voltage - Supply (Minimum)3.135 V

Pricing

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CAD

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