1N3213

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GeneSiC Semiconductor

DIODE GEN PURP 500V 15A DO5

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GeneSiC Semiconductor

DIODE GEN PURP 500V 15A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N3213

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	500 V
Voltage - Forward (Vf) (Max) @ If	15 A, 1.5 V

DIODE GEN PURP 500V 15A DO5

Part	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor 1N3213	DO-203AB, DO-5, Stud	Standard	175 ░C	-65 C	500 V	15 A	DO-5	Chassis, Stud Mount	Standard Recovery >500ns	200 mA	1.5 V, 15 A	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 500 V 15A Chassis, Stud Mount DO-5

Technical documentation and resources