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IPT007N06NATMA1 - H-PSOF-8-1

IPT007N06NATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; TOLL HSOF-8 PACKAGE; 0.75 MOHM;

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IPT007N06NATMA1 - H-PSOF-8-1

IPT007N06NATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; TOLL HSOF-8 PACKAGE; 0.75 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT007N06NATMA1
Current - Continuous Drain (Id) @ 25°C300 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs287 nC
Input Capacitance (Ciss) (Max) @ Vds16000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]375 W
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.01
10$ 4.74
100$ 3.45
500$ 2.97
Digi-Reel® 1$ 7.01
10$ 4.74
100$ 3.45
500$ 2.97
Tape & Reel (TR) 2000$ 2.97
NewarkEach (Supplied on Full Reel) 2000$ 3.05

Description

General part information

IPT007 Series

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.