DMTH47M2LPSW-13

Active

Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques

DMTH47M2LPSW-13

Active

Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH47M2LPSW-13

Current - Continuous Drain (Id) @ 25°C	73 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	891 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	68 W, 3.8 W
Rds On (Max) @ Id, Vgs	7.3 mOhm
Supplier Device Package	PowerDI5060-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

DMTH47M2LPSW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMTH47M2LPSW-13	891 pF	MOSFET (Metal Oxide)	20 V	40 V	2.3 V	7.3 mOhm	14 nC	Surface Mount Wettable Flank	4.5 V 10 V	N-Channel	8-PowerTDFN	3.8 W 68 W	PowerDI5060-8 (Type UX)	-55 °C	175 ░C	73 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.22
		5000	$ 0.21
		12500	$ 0.20

Description

General part information

DMTH47M2LPSW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high- efficiency power management applications.