DMN3035LWN-13

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Diodes Inc

MOSFET 2N-CH 5.5A 8VDFN

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Diodes Inc

MOSFET 2N-CH 5.5A 8VDFN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3035LWN-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.5 A
Gate Charge (Qg) (Max) @ Vgs [Max]	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds	399 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	V-DFN3020-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Configuration	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMN3035LWN-13	5.5 A	Surface Mount	V-DFN3020-8	4.5 nC	-55 °C	150 °C	8-PowerVDFN	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2 V	35 mOhm	399 pF

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General part information

Mosfet Array 5.5A (Ta) Surface Mount V-DFN3020-8

Technical documentation and resources