APT12067B2LLG

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Microsemi Corporation

MOSFET N-CH 1200V 18A T-MAX

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Microsemi Corporation

MOSFET N-CH 1200V 18A T-MAX

Technical Specifications

Parameters and characteristics for this part

Specification	APT12067B2LLG

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4420 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	565 W
Rds On (Max) @ Id, Vgs	670 mOhm
Supplier Device Package	T-MAX™ [B2]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case
Microsemi Corporation APT12067B2LLG	Through Hole	670 mOhm	-55 °C	150 °C	30 V	565 W	150 nC	N-Channel	4420 pF	1200 V	10 V	MOSFET (Metal Oxide)	18 A	T-MAX™ [B2]	5 V	TO-247-3 Variant

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1200 V 18A (Tc) 565W (Tc) Through Hole T-MAX™ [B2]

Technical documentation and resources

No documents available