STFI130N10F3

Obsolete

STMicroelectronics

MOSFET N-CH 100V 46A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 100V 46A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI130N10F3

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	3305 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	9.6 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Power Dissipation (Max) [Max]	Technology	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package
STMicroelectronics STFI130N10F3	57 nC	9.6 mOhm	3305 pF	46 A	100 V	-55 °C	175 ░C	TO-262-3 Full Pack I2PAK	N-Channel	35 W	MOSFET (Metal Oxide)	Through Hole	20 V	10 V	4 V	TO-281 (I2PAKFP)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 46A (Tc) 35W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources