Specification	IRFBG30PBF-BE3

Current - Continuous Drain (Id) (Tc)	3.1 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	980 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	125 W
Rds On (Max)	5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFBG30 Series

Part	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Max)	Vgs (Max)	Mounting Type	FET Type	Rds On (Max)	Power Dissipation (Max)	Package Name	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Technology
Vishay Dale IRFBG30PBF	1000 V	-55 °C	150 °C	980 pF	10 V	TO-220-3	80 nC 80 nC	20 V	Through Hole	N-Channel	5 Ohm	125 W	TO-220AB	4 V	3.1 A	MOSFET (Metal Oxide)
Vishay Dale IRFBG30	1000 V	-55 °C	150 °C	980 pF	10 V	TO-220-3	80 nC 80 nC	20 V	Through Hole	N-Channel	5 Ohm	125 W	TO-220AB	4 V	3.1 A	MOSFET (Metal Oxide)
Vishay Dale IRFBG30PBF-BE3	1000 V	-55 °C	150 °C	980 pF	10 V	TO-220-3	80 nC 80 nC	20 V	Through Hole	N-Channel	5 Ohm	125 W	TO-220AB	4 V	3.1 A	MOSFET (Metal Oxide)

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