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DMN30H4D1S-13 - SOT-23-3

DMN30H4D1S-13

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DMN30H4D1S-13 - SOT-23-3

DMN30H4D1S-13

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN30H4D1S-13
Current - Continuous Drain (Id) @ 25°C430 mA
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.8 nC
Input Capacitance (Ciss) (Max) @ Vds174 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)360 mW
Rds On (Max) @ Id, Vgs4 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

DMN30H14DLY Series

NRND = Not Recommended for New Design