RGTH00TK65DGC11
NRNDRohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V 50A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT
RGTH00TK65DGC11
NRNDRohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V 50A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT
Description
General part information
RGTH00 Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTH00TK65DGC11 |
|---|---|
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 94 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Package Name | TO-3PFM |
| Power - Max | 72 W |
| Reverse Recovery Time (trr) | 225 ns |
| Td (off) @ 25°C | 143 ns |
| Td (on) @ 25°C | 39 ns |
| Test Condition Current | 50 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Technical Data Sheet EN
Precautions When Measuring the Rear of the Package with a Thermocouple
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Notes for Temperature Measurement Using Forward Voltage of PN Junction
About Export Administration Regulations (EAR)
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Estimation of switching losses in IGBTs operating with resistive load
How to Use LTspice® Models: Tips for Improving Convergence
Basics of Thermal Resistance and Heat Dissipation
Importance of Probe Calibration When Measuring Power: Deskew
4 Steps for Successful Thermal Designing of Power Devices
How to Use LTspice® Models
Precautions for Thermal Resistance of Insulation Sheet
Taping Information
Condition of Soldering
About Flammability of Materials
Explanation for Marking
Moisture Sensitivity Level
Method for Monitoring Switching Waveform
What Is Thermal Design
Measurement Method and Usage of Thermal Resistance RthJC
θ<sub>JA</sub> and Ψ<sub>JT</sub>
How to Create Symbols for PSpice Models
Calculation of Power Dissipation in Switching Circuit
Judgment Criteria of Thermal Evaluation
Compliance of the ELV directive
Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules
Notes for Calculating Power Consumption:Static Operation
Inner Structure
Reliability Test Result
Types and Features of Transistors
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Part Explanation
PCB Layout Thermal Design Guide
What is a Thermal Model? (IGBT)
Anti-Whisker formation
Impedance Characteristics of Bypass Capacitor
Notes for Temperature Measurement Using Thermocouples
Package Dimensions
Two-Resistor Model for Thermal Simulation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
How to Use the Thermal Resistance and Thermal Characteristics Parameters
