RN1112MFV,L3F

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1112MFV,L3F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	22 kOhms
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Transistor Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Toshiba Semiconductor and Storage RN1112MFV,L3F	150 mW	50 V	Surface Mount	VESM	300 mV	SOT-723	NPN - Pre-Biased	100 mA	100 nA	22 kOhms	120
Toshiba Semiconductor and Storage RN1112ACT(TPL3)	100 mW	50 V	Surface Mount	CST3	150 mV	SC-101 SOT-883	NPN - Pre-Biased	80 mA	100 nA	22 kOhms	120
Toshiba Semiconductor and Storage RN1112(TE85L,F)	100 mW	50 V	Surface Mount	SSM	300 mV	SC-75 SOT-416	NPN - Pre-Biased	100 mA	100 nA	22 kOhms	120	250 MHz

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Technical documentation and resources