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IKW40N120T2FKSA1 - IPW65R095C7XKSA1

IKW40N120T2FKSA1

NRND
Infineon Technologies

1200 V, 40 A DISCRETE WITH TRENCHSTOP™ IGBT4 AND FREE WHEELING DIODE IN A TO247 PACKAGE. WITH A SWITCHING FREQUENCY RANGE FROM 2-20 KHZ, LOW SWITCHING LOSSES AND LOW EMI EMISSIONS IT FITS PERFECTLY FOR YOUR UPS, SOLAR SYSTEMS, MOTOR DRIVES AND WELDING.

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IKW40N120T2FKSA1 - IPW65R095C7XKSA1

IKW40N120T2FKSA1

NRND
Infineon Technologies

1200 V, 40 A DISCRETE WITH TRENCHSTOP™ IGBT4 AND FREE WHEELING DIODE IN A TO247 PACKAGE. WITH A SWITCHING FREQUENCY RANGE FROM 2-20 KHZ, LOW SWITCHING LOSSES AND LOW EMI EMISSIONS IT FITS PERFECTLY FOR YOUR UPS, SOLAR SYSTEMS, MOTOR DRIVES AND WELDING.

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Technical Specifications

Parameters and characteristics for this part

SpecificationIKW40N120T2FKSA1
Current - Collector (Ic) (Max) [Max]75 A
Gate Charge192 nC
IGBT TypeTrench
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]480 W
Reverse Recovery Time (trr)258 ns
Supplier Device PackagePG-TO247-3-1
Switching Energy5.25 mJ
Td (on/off) @ 25°C314 ns, 33 ns
Test Condition600 V, 12 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.38
30$ 5.52
120$ 4.67
510$ 4.23
NewarkEach 1$ 9.28
10$ 8.55
25$ 6.04
50$ 5.58
100$ 5.13
480$ 5.12
720$ 4.67

Description

General part information

IKW40N120 Series

The IKW40N120T2 is a Low Loss IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel emitter controlled diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.