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IPD096N08N3GATMA1 - TO252-3

IPD096N08N3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DPAK TO-252 PACKAGE; 9.6 MOHM;

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Search across all available documentation for this part.

DocumentsDatasheet
IPD096N08N3GATMA1 - TO252-3

IPD096N08N3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DPAK TO-252 PACKAGE; 9.6 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD096N08N3GATMA1
Current - Continuous Drain (Id) @ 25°C73 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds2410 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]100 W
Rds On (Max) @ Id, Vgs9.6 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.90
10$ 1.21
100$ 0.82
500$ 0.65
1000$ 0.59
Digi-Reel® 1$ 1.90
10$ 1.21
100$ 0.82
500$ 0.65
1000$ 0.59
Tape & Reel (TR) 2500$ 0.53
5000$ 0.51

Description

General part information

IPD096 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources