Technical Specifications
Parameters and characteristics for this part
| Specification | BD237 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 25 W |
| Supplier Device Package | SOT-32-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BD237 Series
The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively.