AUIRF7769L2TR

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Infineon Technologies

AUIRF7769L2 IS AN AUTOMOTIVE MOSFET OFFERING 100 V, N-CH, 3.5 MΩ MAX, DIRECTFET L8, GEN 10.7 FOR HIGH PERFORMANCE IN AUTOMOTIVE APPLICATIONS.

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Active

Infineon Technologies

AUIRF7769L2 IS AN AUTOMOTIVE MOSFET OFFERING 100 V, N-CH, 3.5 MΩ MAX, DIRECTFET L8, GEN 10.7 FOR HIGH PERFORMANCE IN AUTOMOTIVE APPLICATIONS.

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7769L2TR

Current - Continuous Drain (Id) @ 25°C	375 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	11560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric L8
Power Dissipation (Max)	3.3 W, 125 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	DirectFET™ Isometric L8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)
Infineon Technologies AUIRF7769L2TR	300 nC	DirectFET™ Isometric L8	MOSFET (Metal Oxide)	3.5 mOhm	4 V	N-Channel	11560 pF	-55 °C	175 ░C	100 V	Surface Mount	10 V	DirectFET™ Isometric L8	375 A	20 V	3.3 W 125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8

Technical documentation and resources

No documents available