CMS10P10D-HF

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Comchip Technology

MOSFET P-CH 100V 10A DPAK

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Comchip Technology

MOSFET P-CH 100V 10A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CMS10P10D-HF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1419 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	54 W
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

MOSFET P-CH 100V 10A DPAK

Part	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)
Comchip Technology CMS10P10D-HF	3 V	DPAK (2 Leads + Tab), SC-63, TO-252-3	1419 pF	Surface Mount	100 V	TO-252 (DPAK)	10 A	54 W	2 W	-55 °C	150 °C	P-Channel	20 nC	210 mOhm	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 10A (Tc) 2W (Ta), 54W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources