IPP091N06N G

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Infineon Technologies

MOSFET N-CHAN TO-220

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Unknown

Infineon Technologies

MOSFET N-CHAN TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	IPP091N06N G

Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Through Hole
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type
Infineon Technologies IPP091N06N G	2800 pF	60 V	81 nC	PG-TO220-3	MOSFET (Metal Oxide)	TO-220-3	Through Hole	9.1 mOhm	4 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Tc) Through Hole PG-TO220-3

Technical documentation and resources

No documents available