2N2222A

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STMicroelectronics

BJT TO92 40V NPN 0.625W 150C

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STMicroelectronics

BJT TO92 40V NPN 0.625W 150C

Technical Specifications

Parameters and characteristics for this part

Specification	2N2222A

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	500 mW
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

BJT TO92 40V NPN 0.625W 150C

Part	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
STMicroelectronics 2N2222A	Through Hole	1 V	0.01 µA	TO-18-3 Metal Can, TO-206AA	300 MHz	40 V	100	175 °C	NPN	500 mW	TO-18	600 mA

General part information

Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 500 mW Through Hole TO-18

Technical documentation and resources