BSC096N10LS5ATMA1
ActiveINFINEON'S OPTIMOS™ 5 100 POWER MOSFET IN LOGIC LEVEL FEATURES LOW RDS(ON) IN A SMALL SUPERS08
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BSC096N10LS5ATMA1
ActiveINFINEON'S OPTIMOS™ 5 100 POWER MOSFET IN LOGIC LEVEL FEATURES LOW RDS(ON) IN A SMALL SUPERS08
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSC096N10LS5ATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W, 83 W |
| Rds On (Max) @ Id, Vgs | 9.6 mOhm |
| Supplier Device Package | PG-TDSON-8-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.89 | |
| 10 | $ 1.42 | |||
| 25 | $ 1.28 | |||
| 100 | $ 1.11 | |||
| 250 | $ 1.01 | |||
| 500 | $ 0.95 | |||
| 1000 | $ 0.90 | |||
| Digi-Reel® | 1 | $ 1.89 | ||
| 10 | $ 1.42 | |||
| 25 | $ 1.28 | |||
| 100 | $ 1.11 | |||
| 250 | $ 1.01 | |||
| 500 | $ 0.95 | |||
| 1000 | $ 0.90 | |||
| Tape & Reel (TR) | 5000 | $ 0.67 | ||
Description
General part information
BSC096 Series
OptiMOS™ 5 100V power MOSFET in logic leveloffers a low gate charge, reducing switching losses without compromising conduction losses. This OptiMOS™ 5 (BSC096N10LS5) power MOSFET in SuperS08 package allows operations at high switching frequencies and it also provides a low gate threshold voltage which is allowing the MOSFET to be driven directly from microcontrollers. It is targetingcharger,adapterandtelecomapplications.
Documents
Technical documentation and resources