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BZX79B9V1 A0G - DO-35

BZX79B9V1 A0G

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Taiwan Semiconductor Corporation

DIODE ZENER 9.1V 500MW DO35

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BZX79B9V1 A0G - DO-35

BZX79B9V1 A0G

Active
Taiwan Semiconductor Corporation

DIODE ZENER 9.1V 500MW DO35

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBZX79B9V1 A0G
Current - Reverse Leakage @ Vr500 nA
Impedance (Max) (Zzt) [Max]15 Ohms
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseAxial, DO-35, DO-204AH
Power - Max [Max]500 mW
Supplier Device PackageDO-35
Tolerance2 %
Voltage - Forward (Vf) (Max) @ If [Max]1.5 V
Voltage - Zener (Nom) (Vz)9.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BZX79 Series

Zener Diode 9.1 V 500 mW ±2% Through Hole DO-35

Documents

Technical documentation and resources