HN3A51F(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SM6

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Obsolete

Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SM6

Technical Specifications

Parameters and characteristics for this part

Specification	HN3A51F(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74, SOT-457
Power - Max [Max]	300 mW
Supplier Device Package	SM6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	120 V

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature
Toshiba Semiconductor and Storage HN3A51F(TE85L,F)	100 nA	Surface Mount	2 PNP (Dual)	SC-74 SOT-457	120 V	300 mV	SM6	200 hFE	100 MHz	100 mA	300 mW	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6

Technical documentation and resources

No documents available