IPL60R650P6SATMA1
NRNDIPL60R650P6SATMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 600V 6.7A 8-PIN THIN-PAK EP T/R - ARROW.COM
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IPL60R650P6SATMA1
NRNDIPL60R650P6SATMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 600V 6.7A 8-PIN THIN-PAK EP T/R - ARROW.COM
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPL60R650P6SATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 557 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 56.8 W |
| Rds On (Max) @ Id, Vgs | 650 mOhm |
| Supplier Device Package | 8 |
| Supplier Device Package [x] | 5x6 |
| Supplier Device Package [y] | 5x6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.17 | |
| 10 | $ 1.39 | |||
| 100 | $ 0.94 | |||
| 500 | $ 0.75 | |||
| 1000 | $ 0.69 | |||
| 2000 | $ 0.64 | |||
| Digi-Reel® | 1 | $ 2.17 | ||
| 10 | $ 1.39 | |||
| 100 | $ 0.94 | |||
| 500 | $ 0.75 | |||
| 1000 | $ 0.69 | |||
| 2000 | $ 0.64 | |||
| Tape & Reel (TR) | 5000 | $ 0.61 | ||
Description
General part information
IPL60R650 Series
The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm2and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The ThinPAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behavior and EMI.
Documents
Technical documentation and resources