AOT9N70

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 9A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 9A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT9N70

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1630 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOT9N70	30 V	9 A	1630 pF	-55 °C	150 °C	10 V	35 nC	MOSFET (Metal Oxide)	4.5 V	N-Channel	1.2 Ohm	TO-220-3	Through Hole	TO-220	700 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.63