IXTA20N65X

Obsolete

IXYS

MOSFET N-CH 650V 20A TO263

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Obsolete

IXYS

MOSFET N-CH 650V 20A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA20N65X

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1390 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	320 W
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Technology
IXYS IXTA20N65X	TO-263AA	-55 °C	150 °C	1390 pF	5.5 V	20 A	N-Channel	35 nC	Surface Mount	10 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	320 W	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 20A (Tc) 320W (Tc) Surface Mount TO-263AA

Technical documentation and resources