IPU60R3K4CEAKMA1

Obsolete

Infineon Technologies

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IPU60R3K4CEAKMA1

Obsolete

Infineon Technologies

CONSUMER

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPU60R3K4CEAKMA1

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	93 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPU60R Series

Part	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Infineon Technologies IPU60R950C6AKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	4.4 A	950 mOhm	37 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole	280 pF	10 V	600 V	PG-TO251-3	13 nC
Infineon Technologies IPU60R2K1CEBKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	2.3 A	2.1 Ohm	22 W	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	Through Hole		10 V	600 V	PG-TO251-3		140 pF	6.7 nC
Infineon Technologies IPU60R1K4C6BKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	3.2 A	1.4 Ohm		MOSFET (Metal Oxide)	N-Channel	-55 °C	155 °C	Through Hole	200 pF	10 V	600 V	PG-TO251-3	9.4 nC			28.4 W
Infineon Technologies IPU60R1K0CEBKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	4.3 A	1 Ohm	37 W	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	Through Hole	280 pF	10 V	600 V		13 nC
Infineon Technologies IPU60R1K5CEAKMA1		IPAK TO-251-3 Short Leads TO-251AA	3.5 V	3.1 A	1.5 Ohm		MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	Through Hole	200 pF		600 V	PG-TO251-3	9.4 nC
Infineon Technologies IPU60R1K5CEBKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	3.1 A	1.5 Ohm	28 W	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	Through Hole	200 pF	10 V	600 V		9.4 nC
Infineon Technologies IPU60R3K4CEAKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	2.6 A	3.4 Ohm		MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	Through Hole	93 pF	10 V	600 V	PG-TO251-3			4.6 nC
Infineon Technologies IPU60R600C6BKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	7.3 A	600 mOhm		MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole		10 V	600 V	PG-TO251-3	20.5 nC	440 pF		63 W
Infineon Technologies IPU60R1K4C6AKMA1	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	3.2 A	1.4 Ohm		MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole	200 pF	10 V	600 V	PG-TO251-3	9.4 nC			28.4 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPU60R Series

N-Channel 600 V 2.6A (Tj) Through Hole PG-TO251-3

Documents

Technical documentation and resources