JANTX2N5671
Active90V 30A 6W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
JANTX2N5671
Active90V 30A 6W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
Description
General part information
2N5671 Series
This specification covers the performance requirements for NPN, silicon, high-power, 2N5671 and 2N5672 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/488. The device package outline is a TO–204AA (similar to TO-3) for all encapsulated device types.
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N5671 |
|---|---|
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Cutoff (Max) | 10 mA |
| DC Current Gain (hFE) (Min) | 20 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Package Name | TO-3 |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500, 488 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources