IPB100N06S3L-04

Obsolete

Infineon Technologies

MOSFET N-CH 55V 100A TO263-3

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IPB100N06S3L-04

Obsolete

Infineon Technologies

MOSFET N-CH 55V 100A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB100N06S3L-04

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	362 nC
Input Capacitance (Ciss) (Max) @ Vds	17270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

IPB100N Series

Part	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)
Infineon Technologies IPB100N04S2L03ATMA1	300 W	Surface Mount	2 V	PG-TO263-3-2	MOSFET (Metal Oxide)	3 mOhm	6000 pF	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	100 A	4.5 V 10 V	230 nC	40 V	20 V
Infineon Technologies IPB100N04S204ATMA1	300 W	Surface Mount	4 V	PG-TO263-3-2	MOSFET (Metal Oxide)	3.3 mOhm	5300 pF	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	100 A	10 V		40 V	20 V	172 nC
Infineon Technologies IPB100N06S3L-03	300 W	Surface Mount	2.2 V	PG-TO263-3-2	MOSFET (Metal Oxide)	2.7 mOhm	26240 pF	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	100 A		550 nC	55 V	16 V		10 V	5 V
Infineon Technologies IPB100N06S2L05ATMA1	300 W	Surface Mount	2 V	PG-TO263-3-2	MOSFET (Metal Oxide)	4.4 mOhm	5660 pF	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	100 A	4.5 V 10 V	230 nC	55 V	20 V
Infineon Technologies IPB100N06S3L-04		Surface Mount	2.2 V	PG-TO263-3-2	MOSFET (Metal Oxide)	3.5 mOhm	17270 pF	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	100 A		362 nC	55 V	16 V		10 V	5 V	214 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB100N Series

N-Channel 55 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources