Specification	RJK0856DPB-00#J5

Current - Continuous Drain (Id) (Ta)	35 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	3000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK
Power Dissipation (Max)	65 W
Rds On (Max)	8.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK0856 Series

Nch Power MOSFET 80V 35A 8.9mohm LFPAK56

Part	Rds On (Max)	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Ta)	Package Name	FET Type	Technology	Vgs (Max)	Power Dissipation (Max)
Renesas Electronics Corporation RJK0856DPB-00#J5	8.9 mOhm	Surface Mount	150 °C	80 V	40 nC	SC-100 SOT-669	3000 pF	10 V	35 A	LFPAK	N-Channel	MOSFET (Metal Oxide)	20 V	65 W

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