
DMTH45M5LFVW-13
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH45M5LFVW-13
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH45M5LFVW-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A, 71 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 978 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 3.5 W, 51 W |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMTH45M5LFVW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources