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DMTH45M5LFVW-13 - 8-PowerVDFN_BOTTOM

DMTH45M5LFVW-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH45M5LFVW-13 - 8-PowerVDFN_BOTTOM

DMTH45M5LFVW-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH45M5LFVW-13
Current - Continuous Drain (Id) @ 25°C18 A, 71 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.9 nC
Input Capacitance (Ciss) (Max) @ Vds978 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)3.5 W, 51 W
Rds On (Max) @ Id, Vgs5.5 mOhm
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.28
6000$ 0.26
9000$ 0.25
15000$ 0.24
LCSCPiece 1$ 0.65
200$ 0.26
500$ 0.25
1000$ 0.25

Description

General part information

DMTH45M5LFVW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.