Technical Specifications
Parameters and characteristics for this part
| Specification | STD4NK60Z-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 70 W |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.47 | |
| 75 | $ 0.39 | |||
| 150 | $ 0.28 | |||
| 525 | $ 0.23 | |||
| 1050 | $ 0.22 | |||
Description
General part information
STD4NK60 Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.100% avalanche testedVery low intrinsic capacitancesZener-protected
Documents
Technical documentation and resources