STQ1NK60ZR-AP

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STMicroelectronics

N-CHANNEL 600 V, 13 OHM TYP., 0.3 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-92 PACKAGE

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DocumentsTechnical Data Sheet EN Product Change Notice EN +19

STQ1NK60ZR-AP

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STMicroelectronics

N-CHANNEL 600 V, 13 OHM TYP., 0.3 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-92 PACKAGE

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DocumentsTechnical Data Sheet EN Product Change Notice EN +19

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STQ1NK60ZR-AP

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds	94 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	15 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STQ1NK60ZR Series

N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

Part	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
STMicroelectronics STQ1NK60ZR-AP	3 W	Through Hole	TO-226-3, TO-92-3	4.5 V	300 mA	MOSFET (Metal Oxide)	30 V	TO-92-3	15 Ohm	-55 °C	150 °C	10 V	94 pF	N-Channel	6.9 nC	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.64
		10	$ 0.54
		100	$ 0.38
		500	$ 0.30
		1000	$ 0.24
	Tape & Box (TB)	2000	$ 0.21
		6000	$ 0.20
		10000	$ 0.19
		50000	$ 0.18
Newark	Each	1	$ 0.77
		10	$ 0.55
		100	$ 0.41
		500	$ 0.35
		1000	$ 0.32
		4000	$ 0.28
		10000	$ 0.27

Description

General part information

STQ1NK60ZR Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

STQ1NK60ZR-AP

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STQ1NK60ZR-AP

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Technical Specifications

STQ1NK60ZR Series

Pricing

Description

STQ1NK60ZR Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Datasheet

Datasheet

TN1225

AN4337

UM1575

DS3307

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TN1156

TN1378

AN2344

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AN4250

Technical Specifications

STQ1NK60ZR Series