STQ1NK60ZR-AP
ActiveN-CHANNEL 600 V, 13 OHM TYP., 0.3 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-92 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
STQ1NK60ZR-AP
ActiveN-CHANNEL 600 V, 13 OHM TYP., 0.3 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-92 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STQ1NK60ZR-AP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 94 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 15 Ohm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STQ1NK60ZR Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources