BYC100W-1200PQ

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WeEn Semiconductors

DIODE GP 1.2KV 100A TO247-2

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Active

WeEn Semiconductors

DIODE GP 1.2KV 100A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYC100W-1200PQ

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	90 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	3.3 V

DIODE GP 1.2KV 100A TO247-2

Part	Mounting Type	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr
WeEn Semiconductors BYC100W-1200PQ	Through Hole	Standard	90 ns	175 °C	3.3 V	1.2 kV	200 mA, 500 ns	TO-247-2	100 A	TO-247-2	250 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	900	$ 4.17

General part information

Diode 1200 V 100A Through Hole TO-247-2

Technical documentation and resources