IXTC180N085T

Obsolete

IXYS

MOSFET N-CH 85V 110A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 85V 110A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTC180N085T

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	8800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXTC180N085T	N-Channel	ISOPLUS220™	170 nC	Through Hole	150 W	4 V	110 A	-55 °C	175 ░C	85 V	ISOPLUS220™	6.1 mOhm	10 V	20 V	MOSFET (Metal Oxide)	8800 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 110A (Tc) 150W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available