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IPB031N08N5ATMA1 - ROHM RBR10NS40AFHTL

IPB031N08N5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 3.1 MOHM;

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IPB031N08N5ATMA1 - ROHM RBR10NS40AFHTL

IPB031N08N5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 3.1 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB031N08N5ATMA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]87 nC
Input Capacitance (Ciss) (Max) @ Vds6240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)167 W
Rds On (Max) @ Id, Vgs3.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.87
10$ 2.54
100$ 1.79
500$ 1.46
Digi-Reel® 1$ 3.87
10$ 2.54
100$ 1.79
500$ 1.46
Tape & Reel (TR) 1000$ 1.36
2000$ 1.34
NewarkEach (Supplied on Cut Tape) 1$ 3.41
10$ 2.43
25$ 2.23
50$ 2.02
100$ 1.81
250$ 1.66
500$ 1.52

Description

General part information

IPB031 Series

Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET IPB031N08N5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.

Documents

Technical documentation and resources