IXFP5N100P

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IXYS

TRANS MOSFET N-CH 1KV 5A 3-PIN(3+TAB) TO-220AB

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IXYS

TRANS MOSFET N-CH 1KV 5A 3-PIN(3+TAB) TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP5N100P

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	2.8 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFP5N100P	250 W	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	10 V	N-Channel	TO-220-3	1830 pF	Through Hole	2.8 Ohm	5 A	1000 V	TO-220-3	33.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 5A (Tc) 250W (Tc) Through Hole TO-220-3

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