VN2450N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 OHM
VN2450N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 OHM
Description
General part information
VN2450 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Technical Specifications
Parameters and characteristics for this part
| Specification | VN2450N3-G |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 200 mA |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 150 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) | 13 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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