PMDXB600UNELZ

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Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

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PMDXB600UNELZ

Active

Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMDXB600 Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDXB600UNELZ

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	600 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Max)	0.7 nC
Input Capacitance (Ciss) (Max)	21.3 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-XFDFN Exposed Pad
Package Name	DFN1010B-6
Power - Max	380 mW
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	950 mV

PMDXB600 Series

20 V, dual N-channel Trench MOSFET

Part	Current - Continuous Drain (Id)	Power - Max	Package Name	FET Feature	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Configuration - Features	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type	Technology
Nexperia USA Inc. PMDXB600UNEZ	600 mA	265 mW	DFN1010B-6	Logic Level Gate	20 V	950 mV	0.7 nC	-55 °C	150 °C	2	N-Channel	Dual	6-XFDFN Exposed Pad	21.3 pF	Surface Mount	MOSFET (Metal Oxide)
Nexperia USA Inc. PMDXB600UNELZ	600 mA	380 mW	DFN1010B-6		20 V	950 mV	0.7 nC	-55 °C	150 °C	2	N-Channel	Dual	6-XFDFN Exposed Pad	21.3 pF	Surface Mount	MOSFET (Metal Oxide)