Specification	RN2707JE(TE85L,F)

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-553
Package Name	ESV
PNP Count	2
Power - Max	100 mW
Resistor - Base (R1) Resistance	10 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Configuration	Pre-Biased, Dual
Transistor Type	PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN2707 Series

Part	PNP Count	Transistor Type	Transistor Configuration	Current - Collector Cutoff (Max)	Resistor - Emitter Base (R2)	Power - Max	Resistor - Base (R1) Resistance	Vce Saturation (Max)	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector (Ic) (Max)	Package Name	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min)
Toshiba Semiconductor and Storage RN2707JE(TE85L,F)	2	PNP	Dual Pre-Biased	100 nA	47 kOhm	100 mW	10 kOhm	300 mV	50 V	SOT-553	0.1 mA	ESV	Surface Mount	200 MHz	80

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