RN4907,LF

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Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

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Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Technical Specifications

Parameters and characteristics for this part

Specification	RN4907,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	US6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN4907,LF	500 nA	200 MHz	1 NPN 1 PNP	80	200 mW	Surface Mount	300 mV	100 mA	US6	6-TSSOP SC-88 SOT-363	47000 Ohms	50 V
Toshiba Semiconductor and Storage RN4907(T5L,F,T)	100 nA	200 MHz	1 NPN 1 PNP	80	200 mW	Surface Mount	300 mV	100 mA	US6	6-TSSOP SC-88 SOT-363	47000 Ohms	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Technical documentation and resources