Specification	GP3D006A065A

Capacitance	229 pF
Current - Average Rectified (Io)	20 A
Current - Reverse Leakage	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-220-2
Package Name	TO-220-2L
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.55 V

GP3D006 Series

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Capacitance	Package Name	Technology	Voltage - Forward (Vf) (Max)	Reverse Recovery Time (trr)	Current - Reverse Leakage	Package / Case	Mounting Type	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current
SemiQ GP3D006A065A	175 °C	-55 °C	650 V	229 pF	TO-220-2L	SiC (Silicon Carbide) Schottky	1.55 V	0 ns	15 µA	TO-220-2	Through Hole	20 A	500 mA	No Recovery Time	500 mA 500 mA

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