AOW12N65

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO262

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW12N65

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs [Max]	720 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)
Alpha & Omega Semiconductor Inc. AOW12N65	MOSFET (Metal Oxide)	N-Channel	4.5 V	-55 °C	150 °C	10 V	48 nC	TO-262	720 mOhm	Through Hole	278 W	650 V	12 A	I2PAK TO-262-3 Long Leads TO-262AA	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$