IPB90R340C3ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 900V 15A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 900V 15A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB90R340C3ATMA1

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	340 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)
Infineon Technologies IPB90R340C3ATMA1	-55 °C	150 °C	10 V	900 V	2400 pF	N-Channel	94 nC	340 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	15 A	20 V	3.5 V	MOSFET (Metal Oxide)	208 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 15A (Tc) 208W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources

No documents available