IPD80P03P4L07ATMA2

Active

Infineon Technologies

POWER MOSFET, P CHANNEL, 30 V, 80 A, 0.0056 OHM, TO-252 (DPAK), SURFACE MOUNT

Search across all available documentation for this part.

Active

Infineon Technologies

POWER MOSFET, P CHANNEL, 30 V, 80 A, 0.0056 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IPD80P03P4L07ATMA2

Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	88 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	6.8 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2 V

Part	Qualification	Power Dissipation (Max) [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Technology	FET Type	Supplier Device Package	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IPD80P03P4L07ATMA2	AEC-Q101	88 W	5 V	-16 V	80 nC	5700 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	P-Channel	PG-TO252-3-11	Automotive	-55 °C	175 ░C	30 V	6.8 mOhm	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources