
IPB320N20N3GATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 200 V, 34 A, 0.028 OHM, TO-263 (D2PAK), SURFACE MOUNT
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DocumentsTechnical Data Sheet EN

IPB320N20N3GATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 200 V, 34 A, 0.028 OHM, TO-263 (D2PAK), SURFACE MOUNT
Deep-Dive with AI
DocumentsTechnical Data Sheet EN
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB320N20N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 136 W |
| Rds On (Max) @ Id, Vgs [Max] | 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB320 Series
The IPB320N20N3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
Documents
Technical documentation and resources